IEEE Electron Device Letters, 0741-3106

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  1. 2017
  2. 2016
  3. High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current

    Zota, C. B., Lars Erik Wernersson & Erik Lind 2016 Oct 1 In : IEEE Electron Device Letters. 37, 10, p. 1264-1267 4 p., 7552490

    Research output: Contribution to journalArticle

  4. 3-D Integrated Track-and-Hold Circuit Using InAs Nanowire MOSFETs and Capacitors

    Wu, J. & Lars Erik Wernersson 2016 Jul 1 In : IEEE Electron Device Letters. 37, 7, p. 851-854 4 p., 7478620

    Research output: Contribution to journalArticle

  5. 2014
  6. Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

    Mo, J., Erik Lind & Lars-Erik Wernersson 2014 In : IEEE Electron Device Letters. 35, 5, p. 515-517

    Research output: Contribution to journalArticle

  7. RF and DC Analysis of Stressed InGaAs MOSFETs

    Roll, G., Erik Lind, Egard, M., Johansson, S., Lars Ohlsson & Lars-Erik Wernersson 2014 IEEE Electron Device Letters, 35, 2, p. 181-183

    Research output: Contribution to specialist publication or newspaperSpecialist publication article

  8. 2013
  9. High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

    Dey, A., Mattias Borg, Ganjipour, B., Ek, M., Kimberly Dick Thelander, Erik Lind, Claes Thelander & Lars-Erik Wernersson 2013 In : IEEE Electron Device Letters. 34, 2, p. 211-213

    Research output: Contribution to journalArticle

  10. 2012
  11. High-Performance InAs Nanowire MOSFETs

    Dey, A., Claes Thelander, Erik Lind, Kimberly Dick Thelander, Mattias Borg, Magnus Borgström, Nilsson, P. & Lars-Erik Wernersson 2012 In : IEEE Electron Device Letters. 33, 6, p. 791-793

    Research output: Contribution to journalArticle

  12. In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator

    Egard, M., Ärlelid, M., Lars Ohlsson, Mattias Borg, Erik Lind & Lars-Erik Wernersson 2012 In : IEEE Electron Device Letters. 33, 7, p. 970-972

    Research output: Contribution to journalArticle

  13. Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V

    Persson, K-M., Berg, M., Mattias Borg, Wu, J., Henrik Sjöland, Erik Lind & Lars-Erik Wernersson 2012 In : IEEE Electron Device Letters. p. 195-196

    Research output: Contribution to journalPublished meeting abstract

  14. 2011
  15. Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode

    Sun, J., Erik Lind, Maximov, I. & Hongqi Xu 2011 In : IEEE Electron Device Letters. 32, 2, p. 131-133

    Research output: Contribution to journalArticle

  16. 2010
  17. Low-frequency noise in vertical InAs nanowire FETs

    Persson, K-M., Erik Lind, Dey, A., Claes Thelander, Henrik Sjöland & Lars-Erik Wernersson 2010 In : IEEE Electron Device Letters. 31, 5, p. 428-430

    Research output: Contribution to journalArticle

  18. 2008
  19. A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP

    Sun, J., Wallin, D., Maximov, I. & Hongqi Xu 2008 In : IEEE Electron Device Letters. 29, 6, p. 540-542

    Research output: Contribution to journalArticle

  20. Heterostructure Barriers in Wrap Gated Nanowire FETs

    Fröberg, L., Rehnstedt, C., Claes Thelander, Erik Lind, Lars-Erik Wernersson & Lars Samuelson 2008 In : IEEE Electron Device Letters. 29, 9, p. 981-983

    Research output: Contribution to journalLetter

  21. Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate

    Claes Thelander, Fröberg, L., Rehnstedt, C., Lars Samuelson & Lars-Erik Wernersson 2008 In : IEEE Electron Device Letters. 29, 3, p. 206-208

    Research output: Contribution to journalArticle

  22. 2006
  23. Vertical high-mobility wrap-gated InAs nanowire transistor

    Bryllert, T., Lars-Erik Wernersson, Fröberg, L. & Lars Samuelson 2006 In : IEEE Electron Device Letters. 27, 5, p. 323-325

    Research output: Contribution to journalArticle

  24. 2004
  25. Novel nanoelectronic triodes and logic devices with TBJs

    Hongqi Xu, Shorubalko, I., Wallin, D., Maximov, I., Pär Omling, Lars Samuelson & Seifert, W. 2004 In : IEEE Electron Device Letters. 25, 4, p. 164-166

    Research output: Contribution to journalArticle

  26. Resonant tunneling permeable base transistors with high transconductance

    Erik Lind, Lindström, P. & Lars-Erik Wernersson 2004 In : IEEE Electron Device Letters. 25, 10, p. 678-680

    Research output: Contribution to journalArticle

  27. 2002
  28. A novel frequency-multiplication device based on three-terminal ballistic junction

    Shorubalko, I., Hongqi Xu, Maximov, I., Nilsson, D., Pär Omling, Lars Samuelson & Seifert, W. 2002 In : IEEE Electron Device Letters. 23, 7, p. 377-379

    Research output: Contribution to journalArticle