Organisational unit: Research group
We focus on science and technology for emerging Nanoelectronics applications with a particular focus on III-V MOSFETs. Our efforts build on knowledge in nanotechnology that we combine with conventional device top-down processing to realize new functionalities. Our research bridges the areas of Nanoscience (NanoLund) and ICT applications (EIT). We have extensive collaborations related, for instance, to antenna design, communication technologies, surface science, device processing, and physics that we combine with our key competence in device technology. Our 5 research themes are mm-Wave Radar Circuits, Lateral Nanowire THz MOSFETs, Vertical Nanowire MOSFETs, Steep Slope Transistors, LWIR Detectors.
Recent research outputs
The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETsSchenk, A., Sant, S., Moselund, K., Riel, H., E. Memisevic & L. E. Wernersson 2017 Oct 25 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. Institute of Electrical and Electronics Engineers Inc., Vol. 2017-September, p. 273-276 4 p. 8085317
Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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