Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si

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TY - JOUR

T1 - Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si

AU - Berg,Martin

AU - Kilpi,Olli-Pekka

AU - Persson,Karl-Magnus

AU - Svensson,Johannes

AU - Hellenbrand,Markus

AU - Lind,Erik

AU - Wernersson,Lars-Erik

PY - 2016/8/8

Y1 - 2016/8/8

N2 - Vertical InAs nanowire transistors are fabricated on Si using a gate-last method, allowing for lithography-based control of the vertical gate length. The best devices combine good ON- and OFF-performance, exhibiting an ON-current of 0.14 mA/μm, and a sub-threshold swing of 90 mV/dec at 190 nm LG. The device with the highest transconductance shows a peak value of 1.6 mS/μm. From RF measurements, the border trap densities are calculated and compared between devices fabricated using the gate-last and gate-first approaches, demonstrating no significant difference in trap densities. The results thus confirm the usefulness of implementing digital etching in thinning down the channel dimensions.

AB - Vertical InAs nanowire transistors are fabricated on Si using a gate-last method, allowing for lithography-based control of the vertical gate length. The best devices combine good ON- and OFF-performance, exhibiting an ON-current of 0.14 mA/μm, and a sub-threshold swing of 90 mV/dec at 190 nm LG. The device with the highest transconductance shows a peak value of 1.6 mS/μm. From RF measurements, the border trap densities are calculated and compared between devices fabricated using the gate-last and gate-first approaches, demonstrating no significant difference in trap densities. The results thus confirm the usefulness of implementing digital etching in thinning down the channel dimensions.

KW - vertical

KW - nanowire

KW - InAs

KW - MOSFET

KW - transistor

KW - gate-last

KW - self-aligned

U2 - 10.1109/LED.2016.2581918

DO - 10.1109/LED.2016.2581918

M3 - Letter

VL - 37

SP - 966

EP - 969

JO - IEEE Electron Device Letters

T2 - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 8

ER -