High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz

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Abstract

Extremely scaled down tri-gate RF metal-oxide-semiconductor field-effect transistors (MOSFETs) utilising lateral nanowires as the channel, with gate length and nanowire width both of 20 nm are reported. These devices exhibit simultaneous extrapolated ft and fmax of 275 and 400 GHz at VDS = 0.5 V, which is the largest combined ft and fmax, as well as the largest fmax reported for all III-V MOSFETs.

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  • Electrical Engineering, Electronic Engineering, Information Engineering
Original languageEnglish
Pages (from-to)1869-1871
Number of pages3
JournalElectronics Letters
Volume52
Issue number22
StatePublished - 2016 Oct 27
Peer-reviewedYes