High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz

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Bibtex

@article{bc709aa2320640eea555ae9a7ded72be,
title = "High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz",
abstract = "Extremely scaled down tri-gate RF metal-oxide-semiconductor field-effect transistors (MOSFETs) utilising lateral nanowires as the channel, with gate length and nanowire width both of 20 nm are reported. These devices exhibit simultaneous extrapolated ft and fmax of 275 and 400 GHz at VDS = 0.5 V, which is the largest combined ft and fmax, as well as the largest fmax reported for all III-V MOSFETs.",
author = "Zota, {C. B.} and F. Lindelöw and Wernersson, {L. E.} and E. Lind",
year = "2016",
month = "10",
doi = "10.1049/el.2016.3108",
volume = "52",
pages = "1869--1871",
journal = "Electronics Letters",
issn = "1350-911X",
publisher = "IEE",
number = "22",

}