High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz

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High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz. / Zota, C. B.; Lindelöw, F.; Wernersson, L. E.; Lind, E.

In: Electronics Letters, Vol. 52, No. 22, 27.10.2016, p. 1869-1871.

Research output: Contribution to journalArticle

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Zota, C. B.; Lindelöw, F.; Wernersson, L. E.; Lind, E. / High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz.

In: Electronics Letters, Vol. 52, No. 22, 27.10.2016, p. 1869-1871.

Research output: Contribution to journalArticle

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TY - JOUR

T1 - High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz

AU - Zota,C. B.

AU - Lindelöw,F.

AU - Wernersson,L. E.

AU - Lind,E.

PY - 2016/10/27

Y1 - 2016/10/27

N2 - Extremely scaled down tri-gate RF metal-oxide-semiconductor field-effect transistors (MOSFETs) utilising lateral nanowires as the channel, with gate length and nanowire width both of 20 nm are reported. These devices exhibit simultaneous extrapolated ft and fmax of 275 and 400 GHz at VDS = 0.5 V, which is the largest combined ft and fmax, as well as the largest fmax reported for all III-V MOSFETs.

AB - Extremely scaled down tri-gate RF metal-oxide-semiconductor field-effect transistors (MOSFETs) utilising lateral nanowires as the channel, with gate length and nanowire width both of 20 nm are reported. These devices exhibit simultaneous extrapolated ft and fmax of 275 and 400 GHz at VDS = 0.5 V, which is the largest combined ft and fmax, as well as the largest fmax reported for all III-V MOSFETs.

UR - http://www.scopus.com/inward/record.url?scp=84992187072&partnerID=8YFLogxK

U2 - 10.1049/el.2016.3108

DO - 10.1049/el.2016.3108

M3 - Article

VL - 52

SP - 1869

EP - 1871

JO - Electronics Letters

T2 - Electronics Letters

JF - Electronics Letters

SN - 1350-911X

IS - 22

ER -