High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current

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Abstract

We report on In0.85Ga0.15As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of ION = 565μ/Aμm at IOFF =100 nA/μm and VD=0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SSsat of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.

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Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Communication Systems

Keywords

  • III-V, InGaAs, MOSFET, nanowire
Original languageEnglish
Article number7552490
Pages (from-to)1264-1267
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number10
StatePublished - 2016 Oct 1
Peer-reviewedYes