High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
Research output: Contribution to journal › Article
We report on In0.85Ga0.15As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of ION = 565μ/Aμm at IOFF =100 nA/μm and VD=0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SSsat of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.
|Research areas and keywords||
Subject classification (UKÄ) – MANDATORY
|Number of pages||4|
|Journal||IEEE Electron Device Letters|
|State||Published - 2016 Oct 1|