High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current

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High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current. / Zota, Cezar B.; Wernersson, Lars Erik; Lind, Erik.

In: IEEE Electron Device Letters, Vol. 37, No. 10, 7552490, 01.10.2016, p. 1264-1267.

Research output: Contribution to journalArticle

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TY - JOUR

T1 - High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current

AU - Zota,Cezar B.

AU - Wernersson,Lars Erik

AU - Lind,Erik

PY - 2016/10/1

Y1 - 2016/10/1

N2 - We report on In0.85Ga0.15As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of ION = 565μ/Aμm at IOFF =100 nA/μm and VD=0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SSsat of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.

AB - We report on In0.85Ga0.15As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of ION = 565μ/Aμm at IOFF =100 nA/μm and VD=0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SSsat of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.

KW - III-V

KW - InGaAs

KW - MOSFET

KW - nanowire

UR - http://www.scopus.com/inward/record.url?scp=84989828127&partnerID=8YFLogxK

U2 - 10.1109/LED.2016.2602841

DO - 10.1109/LED.2016.2602841

M3 - Article

VL - 37

SP - 1264

EP - 1267

JO - IEEE Electron Device Letters

T2 - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 10

M1 - 7552490

ER -