III/V MOS transistors are currently attracting considerable attention. The main driving force is that the advantageous transport properties in III/V materials are expected to increase the drive current in the MOS transistors. Major challenges for the III/V MOS technologies include the growth of high-quality III/V materials oil Si Substrates and the control of the MOS interface. Using the nanowire technology, we have recently demonstrated enhancement mode operation of 50 nm L-g InAs nanowire wrap-gate transistors in a vertical configuration. They demonstrate a transconductance of 0.5 S/mm, an inverse sub-threshold slope of about 80 mV/dec., and an I-on/I-off ratio > 1000 for a drive voltage of V-d=0.5 V. These results show promise for the use of nanowires in CMOS applications.
|Title of host publication||Sige, Ge, And Related Compounds 3: Materials, Processing, And Devices|
|State||Published - 2008|
|Event||3rd International SiGe, Ge, and Related Compounds Symposium - Honolulu, HI, United States|
Duration: 2008 Oct 12 → 2008 Oct 17
|Conference||3rd International SiGe, Ge, and Related Compounds Symposium|
|Period||2008/10/12 → 2008/10/17|