Impact of doping and diameter on the electrical properties of GaSb nanowires

Research output: Contribution to journalArticle

Standard

Impact of doping and diameter on the electrical properties of GaSb nanowires. / Babadi, Aein S.; Svensson, Johannes; Lind, Erik; Wernersson, Lars Erik.

In: Applied Physics Letters, Vol. 110, No. 5, 053502, 30.01.2017.

Research output: Contribution to journalArticle

Harvard

APA

Vancouver

Author

Babadi, Aein S.; Svensson, Johannes; Lind, Erik; Wernersson, Lars Erik / Impact of doping and diameter on the electrical properties of GaSb nanowires.

In: Applied Physics Letters, Vol. 110, No. 5, 053502, 30.01.2017.

Research output: Contribution to journalArticle

RIS

TY - JOUR

T1 - Impact of doping and diameter on the electrical properties of GaSb nanowires

AU - Babadi,Aein S.

AU - Svensson,Johannes

AU - Lind,Erik

AU - Wernersson,Lars Erik

PY - 2017/1/30

Y1 - 2017/1/30

N2 - The effect of doping and diameter on the electrical properties of vapor-liquid-solid grown GaSb nanowires was characterized using long channel back-gated lateral transistors and top-gated devices. The measurements showed that increasing the doping concentration significantly increases the conductivity while reducing the control over the channel potential and shifting the threshold voltage, as expected. The highest average mobility was 85 cm2/V·s measured for an unintentionally doped GaSb nanowire with a diameter of 45 nm, whereas medium doped nanowires with large diameters (81 nm) showed a value of 153 cm2/V·s. The mobility is found to be independent of nanowire diameter in the range of 36 nm-68 nm, while the resistivity is strongly reduced with increasing diameter attributed to the surface depletion of charge carriers. The data are in good agreement with an analytical calculation of the depletion depth. A high transconductance was achieved by scaling down the channel length to 200 nm, reaching a maximum value of 80 μS/μm for a top-gated GaSb nanowires transistor with an ON-resistance of 26 kΩ corresponding to 3.9 Ω.mm. The lowest contact resistance obtained was 0.35 Ω·mm for transistors with the highest doping concentration.

AB - The effect of doping and diameter on the electrical properties of vapor-liquid-solid grown GaSb nanowires was characterized using long channel back-gated lateral transistors and top-gated devices. The measurements showed that increasing the doping concentration significantly increases the conductivity while reducing the control over the channel potential and shifting the threshold voltage, as expected. The highest average mobility was 85 cm2/V·s measured for an unintentionally doped GaSb nanowire with a diameter of 45 nm, whereas medium doped nanowires with large diameters (81 nm) showed a value of 153 cm2/V·s. The mobility is found to be independent of nanowire diameter in the range of 36 nm-68 nm, while the resistivity is strongly reduced with increasing diameter attributed to the surface depletion of charge carriers. The data are in good agreement with an analytical calculation of the depletion depth. A high transconductance was achieved by scaling down the channel length to 200 nm, reaching a maximum value of 80 μS/μm for a top-gated GaSb nanowires transistor with an ON-resistance of 26 kΩ corresponding to 3.9 Ω.mm. The lowest contact resistance obtained was 0.35 Ω·mm for transistors with the highest doping concentration.

UR - http://www.scopus.com/inward/record.url?scp=85011371147&partnerID=8YFLogxK

U2 - 10.1063/1.4975374

DO - 10.1063/1.4975374

M3 - Article

VL - 110

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 053502

ER -