InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

We report on In0.85Ga0.15As nanowire MOSFETs (NWFETs) with record performance in several key VLSI metrics. These devices exhibit ION = 555 μA/μm (at IOFF = 100 nA/μm and VDD = 0.5 V), ION = 365 μA/μm (at IOFF = 10 nA/μm and VDD = 0.5 V) and a quality factor Q = gm/SS of 40, all of which are the highest reported for a III-V as well as silicon transistor. Furthermore, a highly scalable, self-Aligned gate-last fabrication process is utilized, with a single nanowire as the channel. The devices use a 45° angle between the nanowire and the contacts, which allows for up to a 1.4 times longer gate length at a given pitch.

Details

Authors
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Nano Technology
Original languageEnglish
Title of host publication2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509006373
StatePublished - 2016 Sep 21
Peer-reviewedYes
Event36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 - Honolulu, United States

Conference

Conference36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
CountryUnited States
CityHonolulu
Period2016/06/132016/06/16