InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Bibtex

@inbook{650d1a62e7a9415087bd7084c71c3ec5,
title = "InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v",
abstract = "We report on In0.85Ga0.15As nanowire MOSFETs (NWFETs) with record performance in several key VLSI metrics. These devices exhibit ION = 555 μA/μm (at IOFF = 100 nA/μm and VDD = 0.5 V), ION = 365 μA/μm (at IOFF = 10 nA/μm and VDD = 0.5 V) and a quality factor Q = gm/SS of 40, all of which are the highest reported for a III-V as well as silicon transistor. Furthermore, a highly scalable, self-Aligned gate-last fabrication process is utilized, with a single nanowire as the channel. The devices use a 45° angle between the nanowire and the contacts, which allows for up to a 1.4 times longer gate length at a given pitch.",
author = "Zota, {Cezar B.} and Fredrik Lindelöw and Wernersson, {Lars Erik} and Erik Lind",
year = "2016",
month = "9",
doi = "10.1109/VLSIT.2016.7573418",
booktitle = "2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}