InGaAs tri-gate MOSFETs with record on-current

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

We demonstrate InGaAs tri-gate MOSFETs with an on-current of ION = 650 μA/μm at VDD = 0.5 V and IOFF = 100 nA/μm, enabled by an inverse subthreshold slope of SS = 66 mV/decade and transconductance of gm = 3 mS/μm, a Q-factor of 45. This is the highest reported Ion for both Si-based and III-V MOSFETs. These results continue to push III-V MOSFET experimental performance towards its theoretical limit. We find an improvement in SS from 81 to 75 mV/dec. as the effective oxide thickness (EOT) is scaled down from 1.4 to 1 nm, as well as improvements in SS, gd and DIBL from reducing the nanowire width. We also find that electron mobility remains constant as the width is scaled to 18 nm.

Details

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Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Nano Technology
  • Electrical Engineering, Electronic Engineering, Information Engineering
Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3.2.1-3.2.4
ISBN (Electronic)9781509039012
StatePublished - 2017 Jan 31
Peer-reviewedYes
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States

Conference

Conference62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period2016/12/032016/12/07