InGaAs tri-gate MOSFETs with record on-current

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Standard

InGaAs tri-gate MOSFETs with record on-current. / Zota, Cezar B.; Lindelow, Fredrik; Wernersson, Lars Erik; Lind, Erik.

2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 3.2.1-3.2.4 7838336.

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Harvard

Zota, CB, Lindelow, F, Wernersson, LE & Lind, E 2017, InGaAs tri-gate MOSFETs with record on-current. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838336, Institute of Electrical and Electronics Engineers Inc., pp. 3.2.1-3.2.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 2016/12/03. DOI: 10.1109/IEDM.2016.7838336

APA

Zota, C. B., Lindelow, F., Wernersson, L. E., & Lind, E. (2017). InGaAs tri-gate MOSFETs with record on-current. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 3.2.1-3.2.4). [7838336] Institute of Electrical and Electronics Engineers Inc.. DOI: 10.1109/IEDM.2016.7838336

CBE

Zota CB, Lindelow F, Wernersson LE, Lind E. 2017. InGaAs tri-gate MOSFETs with record on-current. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. pp. 3.2.1-3.2.4. Available from: 10.1109/IEDM.2016.7838336

MLA

Zota, Cezar B. et al. "InGaAs tri-gate MOSFETs with record on-current". 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc.2017. 3.2.1-3.2.4. Available: 10.1109/IEDM.2016.7838336

Vancouver

Zota CB, Lindelow F, Wernersson LE, Lind E. InGaAs tri-gate MOSFETs with record on-current. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc.2017. p. 3.2.1-3.2.4. 7838336. Available from, DOI: 10.1109/IEDM.2016.7838336

Author

Zota, Cezar B. ; Lindelow, Fredrik ; Wernersson, Lars Erik ; Lind, Erik. / InGaAs tri-gate MOSFETs with record on-current. 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 3.2.1-3.2.4

RIS

TY - CHAP

T1 - InGaAs tri-gate MOSFETs with record on-current

AU - Zota,Cezar B.

AU - Lindelow,Fredrik

AU - Wernersson,Lars Erik

AU - Lind,Erik

PY - 2017/1/31

Y1 - 2017/1/31

N2 - We demonstrate InGaAs tri-gate MOSFETs with an on-current of ION = 650 μA/μm at VDD = 0.5 V and IOFF = 100 nA/μm, enabled by an inverse subthreshold slope of SS = 66 mV/decade and transconductance of gm = 3 mS/μm, a Q-factor of 45. This is the highest reported Ion for both Si-based and III-V MOSFETs. These results continue to push III-V MOSFET experimental performance towards its theoretical limit. We find an improvement in SS from 81 to 75 mV/dec. as the effective oxide thickness (EOT) is scaled down from 1.4 to 1 nm, as well as improvements in SS, gd and DIBL from reducing the nanowire width. We also find that electron mobility remains constant as the width is scaled to 18 nm.

AB - We demonstrate InGaAs tri-gate MOSFETs with an on-current of ION = 650 μA/μm at VDD = 0.5 V and IOFF = 100 nA/μm, enabled by an inverse subthreshold slope of SS = 66 mV/decade and transconductance of gm = 3 mS/μm, a Q-factor of 45. This is the highest reported Ion for both Si-based and III-V MOSFETs. These results continue to push III-V MOSFET experimental performance towards its theoretical limit. We find an improvement in SS from 81 to 75 mV/dec. as the effective oxide thickness (EOT) is scaled down from 1.4 to 1 nm, as well as improvements in SS, gd and DIBL from reducing the nanowire width. We also find that electron mobility remains constant as the width is scaled to 18 nm.

UR - http://www.scopus.com/inward/record.url?scp=85014445221&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2016.7838336

DO - 10.1109/IEDM.2016.7838336

M3 - Paper in conference proceeding

SP - 3.2.1-3.2.4

BT - 2016 IEEE International Electron Devices Meeting, IEDM 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -