Investigation of polymethylmethacrylate resist residues using photoelectron microscopy

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate (PMMA) resist residues on SiO2 surfaces after electron beam exposure and resist development, It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 mn. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.

Details

Authors
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Physical Sciences
  • Natural Sciences
  • Condensed Matter Physics
  • Atom and Molecular Physics and Optics
Original languageEnglish
Title of host publicationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
PublisherAmerican Institute of Physics
Pages1139-1142
Volume20
StatePublished - 2002
Peer-reviewedYes
Event20th North American Conference on Molecular Beam Epitaxy - Providence, RI
Duration: 2001 Oct 12001 Oct 3

Publication series

Name
Number3
Volume20
ISSN (Print)1520-8567
ISSN (Electronic)1071-1023

Conference

Conference20th North American Conference on Molecular Beam Epitaxy
Period2001/10/012001/10/03