Quantitative photoelectron spectromicroscopy has been used to study polymethylmethacrylate (PMMA) resist residues on SiO2 surfaces after electron beam exposure and resist development, It was found that correctly exposed and developed PMMA leaves residues with an average thickness of about 1 nm. Higher exposure doses result in the decrease in film thickness, but with residues of about 0.5 mn. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices.
|Title of host publication||Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures|
|Publisher||American Institute of Physics|
|State||Published - 2002|
|Event||20th North American Conference on Molecular Beam Epitaxy - Providence, RI|
Duration: 2001 Oct 1 → 2001 Oct 3
|Conference||20th North American Conference on Molecular Beam Epitaxy|
|Period||2001/10/01 → 2001/10/03|