MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

We present a growth study and structural characterization of InP-InSb nanowire heterostructures. In contrast to planar epitaxy, this heterostructure can be realized in nanowires without the formation of dislocations, despite an extreme lattice-mismatch (10.4%). We obtain high crystal quality in the InSb nanowires, confirmed by a narrow 111 reflection peak measured by XRD. Additionally, the diameter dependence of the nanowire growth rate was investigated. An original competition between surface growth and nanowire growth is found, which can be controlled by varying the nanowire surface coverage. Finally, HRTEM and X-EDS investigations reveal that the InSb nanowire is always defect-free zinc-blende, and that the InP-InSb heterointerface is free from misfit dislocations, although single twin planes are common.

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Subject classification (UKÄ) – MANDATORY

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics
Original languageEnglish
Title of host publication2009 IEEE 21st International Conference On Indium Phosphide & Related Materials (IPRM)
PublisherIEEE--Institute of Electrical and Electronics Engineers Inc.
Pages249-252
StatePublished - 2009
Peer-reviewedYes
Event21st International Conference on Indium Phosphide and Related Materials - Newport Beach, CA, United States
Duration: 2009 May 102009 May 14

Publication series

Name
ISSN (Print)1092-8669

Conference

Conference21st International Conference on Indium Phosphide and Related Materials
CountryUnited States
CityNewport Beach, CA
Period2009/05/102009/05/14