Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si. / Berg, Martin; Persson, Karl-Magnus; Kilpi, Olli-Pekka; Svensson, Johannes; Lind, Erik; Wernersson, Lars-Erik.
Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2016-February Institute of Electrical and Electronics Engineers Inc., 2016. 7409806.Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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TY - CHAP
T1 - Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
AU - Berg,Martin
AU - Persson,Karl-Magnus
AU - Kilpi,Olli-Pekka
AU - Svensson,Johannes
AU - Lind,Erik
AU - Wernersson,Lars-Erik
PY - 2016/2/16
Y1 - 2016/2/16
N2 - In this work, we present a novel self-aligned gate-last fabrication process for vertical nanowire metal-oxide-semiconductor field-effect transistors. The fabrication method allows for exposure dose-defined gate lengths and a local diameter reduction of the intrinsic channel segment, while maintaining thicker highly doped access regions. Using this process, InAs nanowire transistors combining good on-and off-performance are fabricated demonstrating Q = gm,max/SS = 8.2, which is higher than any previously reported vertical nanowire MOSFET.
AB - In this work, we present a novel self-aligned gate-last fabrication process for vertical nanowire metal-oxide-semiconductor field-effect transistors. The fabrication method allows for exposure dose-defined gate lengths and a local diameter reduction of the intrinsic channel segment, while maintaining thicker highly doped access regions. Using this process, InAs nanowire transistors combining good on-and off-performance are fabricated demonstrating Q = gm,max/SS = 8.2, which is higher than any previously reported vertical nanowire MOSFET.
U2 - 10.1109/IEDM.2015.7409806
DO - 10.1109/IEDM.2015.7409806
M3 - Paper in conference proceeding
SN - 9781467398930
VL - 2016-February
BT - Technical Digest - International Electron Devices Meeting, IEDM
PB - Institute of Electrical and Electronics Engineers Inc.
ER -