Single suspended InGaAs nanowire MOSFETs

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Abstract

© 2015 IEEE.We report on In0.s5Ga0.15As NWFETs utilizing a single suspended (above the substrate) selectively grown nanowire as the channel. These devices exhibit gm = 3.3 mS/μm and subthreshold slope SS = 118 mV/dec, both at VDs = 0.5 V and Lg = 60 nm. This is the highest reported value of gm for all MOSFETs and HEMTs, as well as a strong combination of on and off performance, with Q = gm/SS = 28, the highest for non-planar III-V MOSFETs.

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  • Electrical Engineering, Electronic Engineering, Information Engineering
Original languageEnglish
Pages (from-to)31.4.1-31.4.4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
StatePublished - 2016 Feb 16
Peer-reviewedYes