Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn) As

Research output: Contribution to journalArticle

Abstract

Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn) As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn) As/GaAs interface.

Details

Authors
Organisations
External organisations
  • Chalmers University of Technology
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Physical Sciences
  • Natural Sciences
Original languageEnglish
JournalJournal of Physics: Condensed Matter
Volume23
Issue number8
StatePublished - 2011
Peer-reviewedYes