Vertical high mobility wrap-gated InAs nanowire transistor

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceeding

Abstract

We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs nanowires (Jensen, et. al., 2004). A lower limit of the mobility, derived from the transconductance, is on the order of 3000 cm<sup>2</sup>/Vs. The narrow ~100 nm channels show excellent current saturation and a threshold of V<sub>g</sub> = -0.15 V. The sub-threshold characteristics show a close to ideal slope of 62mV/decade over two orders of magnitude

Details

Authors
Organisations
Research areas and keywords

Subject classification (UKÄ) – MANDATORY

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • wrap gated field effect transistor, transconductance, current saturation, sub threshold characteristics, InAs, -0.15 V, high mobility, nanowire transistor
Original languageEnglish
Title of host publication63rd Device Research Conference Digest, 2005. DRC '05
PublisherIEEE--Institute of Electrical and Electronics Engineers Inc.
Number of pages2
Volume1
ISBN (Print)0-7803-9040-7
StatePublished - 2005
Peer-reviewedYes
EventDevice Research Conference, 2005 - Santa Barbara, CA, United States

Conference

ConferenceDevice Research Conference, 2005
CountryUnited States
CitySanta Barbara, CA
Period2005/06/202005/06/22