High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current

Forskningsoutput: TidskriftsbidragArtikel i vetenskaplig tidskrift

Abstract

We report on In0.85Ga0.15As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of ION = 565μ/Aμm at IOFF =100 nA/μm and VD=0.5 V, which is higher than all other reported values for III-V FETs. This is enabled by a transconductance of 2.9 mS/μm and a minimum SSsat of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Kommunikationssystem

Nyckelord

Originalspråkengelska
Artikelnummer7552490
Sidor (från-till)1264-1267
Antal sidor4
TidskriftIEEE Electron Device Letters
Volym37
Utgivningsnummer10
StatusPublished - 2016 okt 1
Peer review utfördJa