InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v
Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding
Abstract
We report on In0.85Ga0.15As nanowire MOSFETs (NWFETs) with record performance in several key VLSI metrics. These devices exhibit ION = 555 μA/μm (at IOFF = 100 nA/μm and VDD = 0.5 V), ION = 365 μA/μm (at IOFF = 10 nA/μm and VDD = 0.5 V) and a quality factor Q = gm/SS of 40, all of which are the highest reported for a III-V as well as silicon transistor. Furthermore, a highly scalable, self-Aligned gate-last fabrication process is utilized, with a single nanowire as the channel. The devices use a 45° angle between the nanowire and the contacts, which allows for up to a 1.4 times longer gate length at a given pitch.
Detaljer
Författare | |
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Enheter & grupper | |
Forskningsområden | Ämnesklassifikation (UKÄ) – OBLIGATORISK
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Originalspråk | engelska |
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Titel på värdpublikation | 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016 |
Förlag | Institute of Electrical and Electronics Engineers Inc. |
ISBN (elektroniskt) | 9781509006373 |
Status | Published - 2016 sep 21 |
Peer review utförd | Ja |
Evenemang | 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 - Honolulu, USA Varaktighet: 2016 jun 13 → 2016 jun 16 |
Konferens
Konferens | 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 |
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Land | USA |
Ort | Honolulu |
Period | 2016/06/13 → 2016/06/16 |