InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

Abstract

We report on In0.85Ga0.15As nanowire MOSFETs (NWFETs) with record performance in several key VLSI metrics. These devices exhibit ION = 555 μA/μm (at IOFF = 100 nA/μm and VDD = 0.5 V), ION = 365 μA/μm (at IOFF = 10 nA/μm and VDD = 0.5 V) and a quality factor Q = gm/SS of 40, all of which are the highest reported for a III-V as well as silicon transistor. Furthermore, a highly scalable, self-Aligned gate-last fabrication process is utilized, with a single nanowire as the channel. The devices use a 45° angle between the nanowire and the contacts, which allows for up to a 1.4 times longer gate length at a given pitch.

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Elektroteknik och elektronik
  • Nanoteknik
Originalspråkengelska
Titel på värdpublikation2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
FörlagInstitute of Electrical and Electronics Engineers Inc.
ISBN (elektroniskt)9781509006373
StatusPublished - 2016 sep 21
Peer review utfördJa
Evenemang36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 - Honolulu, USA
Varaktighet: 2016 jun 132016 jun 16

Konferens

Konferens36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
LandUSA
OrtHonolulu
Period2016/06/132016/06/16

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