InGaAs tri-gate MOSFETs with record on-current
Forskningsoutput: Kapitel i bok/rapport/Conference proceeding › Konferenspaper i proceeding
Abstract
We demonstrate InGaAs tri-gate MOSFETs with an on-current of ION = 650 μA/μm at VDD = 0.5 V and IOFF = 100 nA/μm, enabled by an inverse subthreshold slope of SS = 66 mV/decade and transconductance of gm = 3 mS/μm, a Q-factor of 45. This is the highest reported Ion for both Si-based and III-V MOSFETs. These results continue to push III-V MOSFET experimental performance towards its theoretical limit. We find an improvement in SS from 81 to 75 mV/dec. as the effective oxide thickness (EOT) is scaled down from 1.4 to 1 nm, as well as improvements in SS, gd and DIBL from reducing the nanowire width. We also find that electron mobility remains constant as the width is scaled to 18 nm.
Detaljer
Författare | |
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Enheter & grupper | |
Forskningsområden | Ämnesklassifikation (UKÄ) – OBLIGATORISK
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Originalspråk | engelska |
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Titel på värdpublikation | 2016 IEEE International Electron Devices Meeting, IEDM 2016 |
Förlag | Institute of Electrical and Electronics Engineers Inc. |
Sidor | 3.2.1-3.2.4 |
ISBN (elektroniskt) | 9781509039012 |
Status | Published - 2017 jan 31 |
Peer review utförd | Ja |
Evenemang | 62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, USA Varaktighet: 2016 dec 3 → 2016 dec 7 |
Konferens
Konferens | 62nd IEEE International Electron Devices Meeting, IEDM 2016 |
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Land | USA |
Ort | San Francisco |
Period | 2016/12/03 → 2016/12/07 |