InGaAs tri-gate MOSFETs with record on-current

Forskningsoutput: Kapitel i bok/rapport/Conference proceedingKonferenspaper i proceeding

Abstract

We demonstrate InGaAs tri-gate MOSFETs with an on-current of ION = 650 μA/μm at VDD = 0.5 V and IOFF = 100 nA/μm, enabled by an inverse subthreshold slope of SS = 66 mV/decade and transconductance of gm = 3 mS/μm, a Q-factor of 45. This is the highest reported Ion for both Si-based and III-V MOSFETs. These results continue to push III-V MOSFET experimental performance towards its theoretical limit. We find an improvement in SS from 81 to 75 mV/dec. as the effective oxide thickness (EOT) is scaled down from 1.4 to 1 nm, as well as improvements in SS, gd and DIBL from reducing the nanowire width. We also find that electron mobility remains constant as the width is scaled to 18 nm.

Detaljer

Författare
Enheter & grupper
Forskningsområden

Ämnesklassifikation (UKÄ) – OBLIGATORISK

  • Nanoteknik
  • Elektroteknik och elektronik
Originalspråkengelska
Titel på värdpublikation2016 IEEE International Electron Devices Meeting, IEDM 2016
FörlagInstitute of Electrical and Electronics Engineers Inc.
Sidor3.2.1-3.2.4
ISBN (elektroniskt)9781509039012
StatusPublished - 2017 jan 31
PublikationskategoriForskning
Peer review utfördJa
Evenemang62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, USA
Varaktighet: 2016 dec 32016 dec 7

Konferens

Konferens62nd IEEE International Electron Devices Meeting, IEDM 2016
LandUSA
OrtSan Francisco
Period2016/12/032016/12/07

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