Personal profile
Research
My reasearch is focused on the integration of ferroelectric oxides in high-performance III-V transistors. This device and material combination is well suited for, among other things, mmWave/RF applications, neuromorfics, and beyond von-Neumann memory architectures.
Subject classification (UKÄ)
- Electrical Engineering, Electronic Engineering, Information Engineering
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Collaborations the last five years
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Research output
- 3 Article
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As-deposited ferroelectric HZO on a III–V semiconductor
Andersen, A., Persson, A. E. O. & Wernersson, L.-E., 2022 Jul 4, In: Applied Physics Letters. 121, 1, p. 012901Research output: Contribution to journal › Article › peer-review
Open AccessFile142 Downloads (Pure) -
Interface Characterization of Plasma-Treated InAs Electrodes for Resistive Random-Access Memories Using Capacitance–Voltage Methods
Andersen, A., Mamidala, S. R. & Wernersson, L. E., 2025, In: Physica Status Solidi (A) Applications and Materials Science. 222, 21Research output: Contribution to journal › Article › peer-review
Open Access -
High-k/InGaAs interface defects at cryogenic temperature
Cherkaoui, K., La Torraca, P., Lin, J., Maraviglia, N., Andersen, A., Wernersson, L. E., Padovani, A., Larcher, L. & Hurley, P. K., 2023, In: Solid-State Electronics. 207, 108719.Research output: Contribution to journal › Article › peer-review
Open Access