Research output per year
Research output per year
Personal profile
Free keywords
- MOCVD
- Nitride epitaxy
- Power semiconductor
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Dive into the research topics where Byeongchan So is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
Research output
- 2 Article
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In Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum Wells
Grzanka, E., Bauer, S., Lachowski, A., Grzanka, S., Czernecki, R., So, B., Baumbach, T. & Leszczyński, M., 2025 Jan, In: Nanomaterials. 15, 2, 140.Research output: Contribution to journal › Article › peer-review
Open Access -
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
Logotheti, A., Garigapati, N. S., So, B., Colvin, J., Darakchieva, V. & Lind, E., 2024 Nov 19, (E-pub ahead of print) In: Physica Status Solidi. A: Applications and Materials Science. 6 p.Research output: Contribution to journal › Article › peer-review
Open Access
Projects
- 1 Active
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C3NiT: Center for III Nitride semiconductor technology, C3NiT fas2
Darakchieva, V. (PI), Löfgren, A. (Project coordinator), Rentschler, G. (Project coordinator), Lind, E. (Researcher), Logotheti, A. (Research student), So, B. (Researcher), Malm, J. (Researcher) & Rindert, V. (Research student)
Swedish Government Agency for Innovation Systems (Vinnova)
2022/11/21 → 2027/12/31
Project: Research