Engineering
Photodetector
100%
Fabrication
45%
Optical Performance
36%
High Gain
20%
Gain-Bandwidth Product
20%
Long Wavelength
20%
Photocurrent
19%
Models
19%
Electronics
18%
Optoelectronics
18%
Nanomaterial
18%
Characteristics
14%
Heterostructures
9%
Gate Bias
9%
Constant Time
9%
Fourier Transform
9%
Semiconductor
9%
Defects
9%
Wavelength
9%
Residual Strain
9%
Millisecond
9%
Lower Energy
9%
Cutoff Frequency
8%
Operating Frequency
8%
Charge Carrier
8%
Interface Trap
8%
Optical Signal
8%
Field-Effect Transistor
8%
Conduction Band Edge
8%
Matrix Element
8%
Carrier Concentration
7%
Induced Defect
6%
Indium-Tin-Oxide
6%
Theoretical Investigation
6%
Experimental Investigation
6%
Electric Field
6%
Normal Incidence
6%
Experimental Result
5%
Material Science
Nanowire
90%
Detector
42%
Indium Tin Oxide
31%
Devices
26%
Nanocrystalline Material
18%
Melt Growth
18%
Metal
12%
Crystalline Material
12%
Quantum Well
11%
Characterization
10%
Heterojunction
9%
Switch
9%
Electronic Structure
9%
Linewidth
9%
Field Effect Transistor
8%
Charge Carrier
8%
Carrier Concentration
7%
Crystal Lattice
6%
Fourier Transform Spectroscopy
6%
Semiconductor Material
6%
Electron Backscatter Diffraction
6%
