Robin Atle

Robin Atle

Doctoral Student

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Research

In the era of digitalization, "big data" and IOT the power consumption of current memory technologies is not sustainable. My research aims to develop emerging memory technologies based on ferroelectric HfZrO2 to improve on both speed and power consumption, for an enviromentally sustainable future. Furthermore, this technology has the potantial to realise hardware based neuromorphic computation enabling far superior deep-learning performance to traditional architectures.

With a background in Engineering Nanoscience my interests cover material characterization in combination with implementation of these properties in electrical nano devices.  

UKÄ subject classification

  • Nano Technology
  • Other Electrical Engineering, Electronic Engineering, Information Engineering
  • Materials Engineering

Keywords

  • Ferroelectricity
  • Thin-films
  • Hafnium Oxide
  • Nanowires
  • Ferroelectric Tunnel Junctions

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