Material Science
Ferroelectric Material
100%
Temperature
36%
Devices
31%
Electrode
25%
Lamp
22%
Durability
22%
Annealing
21%
Semiconductor Material
19%
Film
19%
Ferroelectricity
16%
Oxide Compound
15%
Field Effect Transistor
15%
Crystalline Material
15%
Microstructure
15%
Silicon
15%
Characterization
14%
Nanowire
12%
Materials Characterization
11%
Indium
11%
Melt Growth
11%
Interface (Material)
11%
Neuromorphic Computing
11%
Nanodevice
11%
Crystallization
9%
Capacitance
8%
Metal
8%
Defect Density
8%
III-V Semiconductor
8%
Capacitor
6%
Electrical Property
5%
Engineering
Tunnels
45%
Characteristics
34%
Semiconductor
25%
Defects
22%
Performance
21%
Annealing Temperature
20%
Annealing
18%
Millisecond
16%
Microstructure
15%
Fabrication
14%
Temperature
14%
Tunnel Construction
12%
High Quality
12%
Arsenide
11%
Material Interface
11%
Cycles
11%
Interfacial Layer
11%
Engineering
11%
III-V Semiconductor
10%
Gate Stack
9%
Substrates
9%
Metal-Oxide-Semiconductor Field-Effect Transistor
9%
Voltage
8%
Field-Effect Transistor
7%
Density
7%
Nanosecond
6%
Crystal Structure
5%
Annealing Process
5%
Digital Circuits
5%
High Frequency
5%
Short Duration
5%
Atomic Layer Deposition
5%
Transmissions
5%
Device Performance
5%
Thermal Process
5%
Low Cost
5%
Nanocrystalline
5%
