Ultra-wide bandgap (UWB) semiconductors, such as gallium nitride (GaN) and its alloys, are becoming essential in modern power electronics. Their ability to handle high voltages and operate efficiently makes them valuable for applications like electric vehicles and renewable energy systems. These materials enable transistors that improve power conversion efficiency, supporting efforts toward more sustainable energy use.

One key challenge in GaN-based technology is developing high-quality interfaces between GaN and insulating oxides for MOSFETs (metal-oxide-semiconductor field-effect transistors). These components are crucial for advanced power electronics, but their performance depends on achieving stable and well-controlled semiconductor-oxide interfaces.

My research focuses on addressing this challenge by growing UWB semiconductors using metal-organic vapor phase epitaxy (MOVPE) and studying their properties at the atomic level. To do this, I use advanced characterization techniques at MAX-IV, a synchrotron facility that allows for detailed material analysis. In particular, I apply X-ray Photoemission Spectroscopy (XPS) to investigate semiconductor-oxide interfaces under different conditions, from ultrahigh vacuum to near-ambient pressures.

Understanding these interfaces more deeply can help improve device performance and reliability, contributing to more efficient power electronics. By refining these materials and their properties, we can support the development of technologies that play a role in reducing energy consumption and enabling greener solutions.