Research output per year
Research output per year
Personal profile
UKÄ subject classification
- Natural Sciences
- Engineering and Technology
Free keywords
- Physics, Material science, Semiconductors
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Dive into the research topics where Vanya Darakchieva is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
Persson, A. R., Gustafsson, A., Bi, Z., Samuelson, L., Darakchieva, V. & Persson, P. O. Å., 2023, In: Applied Physics Letters. 123, 2, 022103.Research output: Contribution to journal › Article › peer-review
Open Access -
High-quality N-polar GaN optimization by multi-step temperature growth process
Zhang, H., Chen Jr., T., Papamichail, A., Persson, I., Paskov, P. P. & Darakchieva, V., 2023 Feb, In: Journal of Crystal Growth. 603, 127002.Research output: Contribution to journal › Article › peer-review
Open Access -
Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
Stanishev, V., Armakavicius, N., Gogova, D., Nawaz, M., Rorsman, N., Paskov, P. P. & Darakchieva, V., 2023 Nov, In: Vacuum. 217, 112481.Research output: Contribution to journal › Article › peer-review
Open Access -
Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
Zhang, H., Persson, I., Chen Jr., T., Papamichail, A., Tran, D. Q., Persson, P. O. Å., Paskov, P. P. & Darakchieva, V., 2023 Jan, In: Crystal Growth and Design. 23, 2, p. 1049 –1056 8 p.Research output: Contribution to journal › Article › peer-review
Open Access -
Thermal conductivity of ScxAl1−xN and YxAl1−xN alloys
Tran, D. Q., Tasnádi, F., Žukauskaitė, A., Birch, J., Darakchieva, V. & Paskov, P. P., 2023 May 1, In: Applied Physics Letters. 122, 18, 182107.Research output: Contribution to journal › Article › peer-review
Projects
- 6 Active
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Terahertz Electron Paramagnetic Resonance Ellipsometry for defect characterization of ultrawide bandgap semiconductors
2023/01/01 → 2027/12/31
Project: Research
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Center for III Nitride semiconductor technology, C3NiT fas2
Darakchieva, V., Löfgren, A., Rentschler, G. & Lind, E.
Swedish Government Agency for Innovation Systems (Vinnova)
2022/11/21 → 2027/12/31
Project: Research
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Optimization of GaN/WBG Technologies
Logotheti, A., Darakchieva, V. & Lind, E.
2022/10/03 → …
Project: Dissertation
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Vertical GaN on silicon: Wide band gap power at silicon cost
Swedish Government Agency for Innovation Systems (Vinnova)
2021/05/10 → 2024/05/08
Project: Research
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YESvGaN: Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost
European Commission - Horizon 2020
2021/05/01 → 2024/04/30
Project: Research