Vanya Darakchieva is working on the development of novel semiconductor materials for high-frequency and power electronics. Her research also focuses on developing spectroscopic techniques for studying electronic and transport properties of materials from bulk to nanoscale.

Ultra-wide bandgap semiconductors. Focus is put on β-Ga₂O₃ and AlN for applications in high-power electronic devices with substantial efficiency gain in e.g., generation and transmission of electric power, electrification of vehicles and motor drivers. Current research efforts include development of MOVPE, PLD and remote epitaxy of β-Ga₂O₃ and AlN and profound understanding of defect, free charge carrier and electronic properties in relation to microstructure of thin films and device heterostructures. Dedicated efforts are directed also to improve the understanding of theory-guided non-equilibrium synthesis approaches to control the creation of desired defect structures in AlN and related UWBG materials for power and quantum technology applications.

Terahertz ellipsometry, Terahertz EPR Ellipsometry and optical Hall effect. We have developed unique THz ellipsometry, THz EPR Ellipsometry and magneto-ellipsometry (optical Hall effect) instrumentation and methodology at the Terahertz Materials Analysis Center. These novel techniques make it possible to explore electronic, transport, spin and magnetic properties and phenomena in e.g, semiconductors, nanomaterials, organic materials, which cannot be assessed by other means. Current research efforts include application of THz to FIR ellipsometry to study 2DEG in transistor and quantum structures, 2D materials, conductive polymers, proteins and biomaterials and application of THz-EPR to study defects in solids for quantum technology.

III-Nitrides for applications in the next generation of wireless communication, sensing, and power infrastructures. The research focuses on optimization of epitaxial design and properties of GaN and AlGaN device structures on SiC, GaN and AlN substrates by MOVPE. The activity covers growth of device structures with the main aim to minimize defect densities (dislocations and background impurities), and the design of the epi-stack targeting different functionalities, e.g. power amplification, noise, and flicker-noise, switch losses, device design, etc.

2D materials. Current research activities include using THz ellipsometry to study, understand and optimize the transport, electronic, spin and structural properties of e.g., epitaxial graphene grown on SiC, MAXens, and BN.