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Zhaoxia Bi


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Zhaoxia Bi obtained his B.S. degree in physics in 2000 at Nanjing University, China. In the same university, he obtained his Ph.D. in Microelectronics and Solid State Electronics in 2005 with Prof. Rong Zhang. He then moved to Lund University, Sweden and conducted post-doctoral research on GaN nanowire growth in the group led by Prof. Lars Samuelson. In 2007, he joined the company GLO AB as a senior member of technical staff and worked on nitride light-emitting diodes based on GaN nanowires. Since 2011, he is a senior researcher in Physics Department at Lund University. His current work is mainly on the growth of ternary InGaN alloys (such as submicrometer InGaN platelets) aiming to be used as a template for highly efficient long wavelength nitride green and red light-emitting diodes.


  • Nitrides
  • Semiconductors
  • nanowires


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