Project Details
Description
This project introduces a novel AI-enhanced functional microscopy to study the surface defect properties and associated recombination dynamics in an advanced gallium indium phosphide (GaInP) nanowire (NW) light-emitting diode (LED).
The inherent defects formed during the growth of GaInP NWs lead to non-radiative losses and limit the quantum efficiency of an LED. The newly developed AI-enhanced intensity modulation two-photon excited photoluminescence (PL) microscopy (IM2PM) is used to study the fundamental photophysical properties of the defects and how surface passivation influences the related carrier recombination processes with sufficient spatial resolution. The information on the defect-related dynamics of surface passivation will be used to optimize the surface passivation of GaInP NWs. This will lead to the development of high-quality LEDs with improved efficiency.
The inherent defects formed during the growth of GaInP NWs lead to non-radiative losses and limit the quantum efficiency of an LED. The newly developed AI-enhanced intensity modulation two-photon excited photoluminescence (PL) microscopy (IM2PM) is used to study the fundamental photophysical properties of the defects and how surface passivation influences the related carrier recombination processes with sufficient spatial resolution. The information on the defect-related dynamics of surface passivation will be used to optimize the surface passivation of GaInP NWs. This will lead to the development of high-quality LEDs with improved efficiency.
| Status | Finished |
|---|---|
| Effective start/end date | 2023/12/01 → 2024/12/31 |