11% efficiency 100GHz InP-based heterostructure barrier varactor quintupler

Tomas Bryllert; A O Olsen; J Vukusic; T A Emadi; M Ingvarson; J Stake; D Lippens

doi:10.1049/el:20057633

11% efficiency 100GHz InP-based heterostructure barrier varactor quintupler

Tomas Bryllert, A O Olsen, J Vukusic, T A Emadi, M Ingvarson, J Stake, D Lippens

Solid State Physics

Research output: Contribution to journal › Article › peer-review

Abstract

A record conversion efficiency of 11.4% at 100 GHz using a heretostructure barrier varactor (HBV) quintuplet is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-Nvaveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs/InAlAs/AlAs epitaxial layers on an InP substrate.

Original language	English
Pages (from-to)	131-132
Journal	Electronics Letters
Volume	41
Issue number	3
DOIs	https://doi.org/10.1049/el:20057633
Publication status	Published - 2005

Subject classification (UKÄ)

Condensed Matter Physics

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10.1049/el:20057633

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title = "11% efficiency 100GHz InP-based heterostructure barrier varactor quintupler",

abstract = "A record conversion efficiency of 11.4% at 100 GHz using a heretostructure barrier varactor (HBV) quintuplet is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-Nvaveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs/InAlAs/AlAs epitaxial layers on an InP substrate.",

author = "Tomas Bryllert and Olsen, {A O} and J Vukusic and Emadi, {T A} and M Ingvarson and J Stake and D Lippens",

year = "2005",

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pages = "131--132",

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AU - Bryllert, Tomas

AU - Olsen, A O

AU - Vukusic, J

AU - Emadi, T A

AU - Ingvarson, M

AU - Stake, J

AU - Lippens, D

PY - 2005

Y1 - 2005

N2 - A record conversion efficiency of 11.4% at 100 GHz using a heretostructure barrier varactor (HBV) quintuplet is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-Nvaveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs/InAlAs/AlAs epitaxial layers on an InP substrate.

AB - A record conversion efficiency of 11.4% at 100 GHz using a heretostructure barrier varactor (HBV) quintuplet is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-Nvaveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs/InAlAs/AlAs epitaxial layers on an InP substrate.

U2 - 10.1049/el:20057633

DO - 10.1049/el:20057633

M3 - Article

SN - 1350-911X

VL - 41

SP - 131

EP - 132

JO - Electronics Letters

JF - Electronics Letters

IS - 3

ER -

11% efficiency 100GHz InP-based heterostructure barrier varactor quintupler

Abstract

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