Abstract
Abstract—Two different frequency doubling power amplifiers have been measured, one with differential and one with single-ended input, both with single-ended output at 60 GHz. The amplifiers have been implemented in a 1p8M 130-nm CMOS process. The resonant nodes are tuned to 30 GHz or 60 GHz using on-chip transmission lines, which have been simulated in ADS and Momentum.
The measured input impedance of the single-ended PA is high at 250 Ω, and the differential input is similar, making the PA a suitable load for an oscillator in a fully integrated transmitter. The single-ended and differential input PA delivers 1 dBm and 3 dBm, respectively, of measured saturated output power to 50 Ω, both with a drain efficiency of 8%
The measured input impedance of the single-ended PA is high at 250 Ω, and the differential input is similar, making the PA a suitable load for an oscillator in a fully integrated transmitter. The single-ended and differential input PA delivers 1 dBm and 3 dBm, respectively, of measured saturated output power to 50 Ω, both with a drain efficiency of 8%
| Original language | English |
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| Title of host publication | Proceedings of Swedish System-on-Chip Conference (SSoCC) |
| Pages | 1-4 |
| Number of pages | 4 |
| Publication status | Published - 2008 |
| Event | Swedish System-on-Chip Conference 2008 (SSoCC’08) - Gnesta, Gnesta, Sweden Duration: 2008 May 5 → 2008 May 6 |
Conference
| Conference | Swedish System-on-Chip Conference 2008 (SSoCC’08) |
|---|---|
| Country/Territory | Sweden |
| City | Gnesta |
| Period | 2008/05/05 → 2008/05/06 |
Subject classification (UKÄ)
- Electrical Engineering, Electronic Engineering, Information Engineering