850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier

H Aniktar; Henrik Sjöland; J H, Mikkelsen; T Larsen

850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier

H Aniktar, Henrik Sjöland, J H, Mikkelsen, T Larsen

Department of Electrical and Information Technology

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 mum CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm plusmn 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm plusmn 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6 dB plusmn 0.7 dB and 13 dB plusmn 2.1 dB, respectively.

Original language	English
Title of host publication	Proceedings of European Microwave Week 2006
Pages	403-406
Publication status	Published - 2006

Subject classification (UKÄ)

Electrical Engineering, Electronic Engineering, Information Engineering

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http://ieeexplore.ieee.org/iel5/4057701/4057702/04057835.pdf?tp=&isnumber=&arnumber=4057835

Cite this

@inproceedings{2d1577a229e24ef8acc97ddc5486a987,

title = "850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier",

abstract = "This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 mum CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm plusmn 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm plusmn 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6 dB plusmn 0.7 dB and 13 dB plusmn 2.1 dB, respectively.",

author = "H Aniktar and Henrik Sj{\"o}land and {H, Mikkelsen}, J and T Larsen",

year = "2006",

language = "English",

pages = "403--406",

booktitle = "Proceedings of European Microwave Week 2006",

}

TY - GEN

T1 - 850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier

AU - Aniktar, H

AU - Sjöland, Henrik

AU - H, Mikkelsen, J

AU - Larsen, T

PY - 2006

Y1 - 2006

N2 - This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 mum CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm plusmn 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm plusmn 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6 dB plusmn 0.7 dB and 13 dB plusmn 2.1 dB, respectively.

AB - This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 mum CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm plusmn 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm plusmn 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6 dB plusmn 0.7 dB and 13 dB plusmn 2.1 dB, respectively.

M3 - Paper in conference proceeding

SP - 403

EP - 406

BT - Proceedings of European Microwave Week 2006

ER -

850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier

Abstract

Subject classification (UKÄ)

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Cite this