A 1.6-2.6GHz 29dBm Injection-Locked Power Amplifier with 64% peak PAE in 65nm CMOS

Jonas Lindstrand, Carl Bryant, Markus Törmänen, Henrik Sjöland

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

8 Citations (SciVal)


This paper presents a wideband CMOS power
amplifier intended for cellular handset applications. The circuit
exploits injection locking to achieve a power gain of 20.5dB from
a single stage amplifier. The maximum output power of 29dBm,
with a peak drain- and power-added-efficiency (PAE) of 66%
and 64%, respectively, occurs at a center frequency of 2GHz
with a 3V supply. A cross-coupled cascode topology enables a
wideband PAE exceeding 50% from 1.6 to 2.6GHz. For output
power levels below 4dBm the circuit operates as a linear class
AB amplifier with a power consumption of 17mW from a 0.48V
supply. The power gain of 20.5dB is kept constant for all output
powers; with an AM-AM- and AM-PM-conversion of 0.2dB and
17deg, respectively, over the entire WCDMA dynamic range of
80dB. The circuit is implemented in a standard 65nm CMOS
process with a total chip area of 0.52x0.48mm2 including pads.
Original languageEnglish
Title of host publicationProc. IEEE European Solid State Circuits Conference
PublisherIEEE - Institute of Electrical and Electronics Engineers Inc.
Number of pages4
Publication statusPublished - 2011
EventIEEE European Solid State Circuits Conference, ESSCIRC 2011 - Helsinki, Finland
Duration: 2011 Sep 122011 Sep 16

Publication series

ISSN (Print)1930-8833


ConferenceIEEE European Solid State Circuits Conference, ESSCIRC 2011

Subject classification (UKÄ)

  • Electrical Engineering, Electronic Engineering, Information Engineering


  • Power efficiency
  • Poweramplifier
  • Injection lock
  • CMOS
  • Hybrid EER


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