A 175uW 100MHz-2GHz inductorless receiver frontend in 65nm CMOS

Carl Bryant; Henrik Sjöland

A 175uW 100MHz-2GHz inductorless receiver frontend in 65nm CMOS

Research output: Contribution to conference › Paper, not in proceeding › peer-review

Abstract

This paper presents an inductorless ultra-low power frontend for applications such as sensor networks and medical implants. By using a completely inductorless topology the chip area is just 0.017mm2, excluding pads. A real input impedance of 300Ω is achieved with current feedback. Manufactured in 65nm CMOS, it measures more than 17dB gain from 100MHz to 2000MHz while consuming only 175μW from a 0.9V supply (The LNA consumes 115μW). The measured noise figure and IIP3 is 11dB and -16.8dBm respectively.

Original language	English
Number of pages	4
Publication status	Published - 2010
Event	NORCHIP Conference, 2010 - Tampere, Finland Duration: 2010 Nov 15 → 2010 Nov 16

Conference

Conference	NORCHIP Conference, 2010
Country/Territory	Finland
City	Tampere
Period	2010/11/15 → 2010/11/16

Subject classification (UKÄ)

Electrical Engineering, Electronic Engineering, Information Engineering

Free keywords

impedance matching
Low Noise Amplifier
CMOS
Mixer
LNA
inductorless
ultra low power
Front-end

Cite this

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title = "A 175uW 100MHz-2GHz inductorless receiver frontend in 65nm CMOS",

abstract = "This paper presents an inductorless ultra-low power frontend for applications such as sensor networks and medical implants. By using a completely inductorless topology the chip area is just 0.017mm2, excluding pads. A real input impedance of 300Ω is achieved with current feedback. Manufactured in 65nm CMOS, it measures more than 17dB gain from 100MHz to 2000MHz while consuming only 175μW from a 0.9V supply (The LNA consumes 115μW). The measured noise figure and IIP3 is 11dB and -16.8dBm respectively.",

keywords = "impedance matching, Low Noise Amplifier, CMOS, Mixer, LNA, inductorless, ultra low power, Front-end",

author = "Carl Bryant and Henrik Sj{\"o}land",

year = "2010",

language = "English",

note = "NORCHIP Conference, 2010 ; Conference date: 15-11-2010 Through 16-11-2010",

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TY - CONF

T1 - A 175uW 100MHz-2GHz inductorless receiver frontend in 65nm CMOS

AU - Bryant, Carl

AU - Sjöland, Henrik

PY - 2010

Y1 - 2010

N2 - This paper presents an inductorless ultra-low power frontend for applications such as sensor networks and medical implants. By using a completely inductorless topology the chip area is just 0.017mm2, excluding pads. A real input impedance of 300Ω is achieved with current feedback. Manufactured in 65nm CMOS, it measures more than 17dB gain from 100MHz to 2000MHz while consuming only 175μW from a 0.9V supply (The LNA consumes 115μW). The measured noise figure and IIP3 is 11dB and -16.8dBm respectively.

AB - This paper presents an inductorless ultra-low power frontend for applications such as sensor networks and medical implants. By using a completely inductorless topology the chip area is just 0.017mm2, excluding pads. A real input impedance of 300Ω is achieved with current feedback. Manufactured in 65nm CMOS, it measures more than 17dB gain from 100MHz to 2000MHz while consuming only 175μW from a 0.9V supply (The LNA consumes 115μW). The measured noise figure and IIP3 is 11dB and -16.8dBm respectively.

KW - impedance matching

KW - Low Noise Amplifier

KW - CMOS

KW - Mixer

KW - LNA

KW - inductorless

KW - ultra low power

KW - Front-end

M3 - Paper, not in proceeding

T2 - NORCHIP Conference, 2010

Y2 - 15 November 2010 through 16 November 2010

ER -

A 175uW 100MHz-2GHz inductorless receiver frontend in 65nm CMOS

Abstract

Conference

Subject classification (UKÄ)

Free keywords

Fingerprint

Cite this