A 1.8-GHz CMOS VCO tuned by an accumulation-mode MOS varactor

Pietro Andreani; Sven Mattisson

doi:10.1109/ISCAS.2000.857093

A 1.8-GHz CMOS VCO tuned by an accumulation-mode MOS varactor

Pietro Andreani, Sven Mattisson

Department of Electrical and Information Technology

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Abstract

This work presents a 1.8-GHz VCO tuned by a pMOS capacitor working exclusively in the accumulation and depletion regions. The VCO has been fabricated in a standard 0.6 μm CMOS process. It shows a tuning range of about 11% and a phase noise of -137 dBc/Hz at 3 MHz offset from the carrier, for a current consumption of 2.7 mA. The VCO compares favorably with a CMOS VCO tuned by a reverse biased diode varactor

Original language	English
Title of host publication	The 2000 IEEE International Symposium on Circuits and Systems, 2000. Proceedings. ISCAS 2000.
Pages	315-318
Volume	1
DOIs	https://doi.org/10.1109/ISCAS.2000.857093
Publication status	Published - 2000

Publication series

Name
Volume	1

Subject classification (UKÄ)

Electrical Engineering, Electronic Engineering, Information Engineering

Access to Document

10.1109/ISCAS.2000.857093

http://ieeexplore.ieee.org/iel5/6910/18601/00857093.pdf?tp=&isnumber=18601&arnumber=857093&punumber=6910

Cite this

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title = "A 1.8-GHz CMOS VCO tuned by an accumulation-mode MOS varactor",

abstract = "This work presents a 1.8-GHz VCO tuned by a pMOS capacitor working exclusively in the accumulation and depletion regions. The VCO has been fabricated in a standard 0.6 μm CMOS process. It shows a tuning range of about 11% and a phase noise of -137 dBc/Hz at 3 MHz offset from the carrier, for a current consumption of 2.7 mA. The VCO compares favorably with a CMOS VCO tuned by a reverse biased diode varactor",

author = "Pietro Andreani and Sven Mattisson",

year = "2000",

doi = "10.1109/ISCAS.2000.857093",

language = "English",

isbn = "0-7803-5482-6",

volume = "1",

pages = "315--318",

booktitle = "The 2000 IEEE International Symposium on Circuits and Systems, 2000. Proceedings. ISCAS 2000.",

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T1 - A 1.8-GHz CMOS VCO tuned by an accumulation-mode MOS varactor

AU - Andreani, Pietro

AU - Mattisson, Sven

PY - 2000

Y1 - 2000

N2 - This work presents a 1.8-GHz VCO tuned by a pMOS capacitor working exclusively in the accumulation and depletion regions. The VCO has been fabricated in a standard 0.6 μm CMOS process. It shows a tuning range of about 11% and a phase noise of -137 dBc/Hz at 3 MHz offset from the carrier, for a current consumption of 2.7 mA. The VCO compares favorably with a CMOS VCO tuned by a reverse biased diode varactor

AB - This work presents a 1.8-GHz VCO tuned by a pMOS capacitor working exclusively in the accumulation and depletion regions. The VCO has been fabricated in a standard 0.6 μm CMOS process. It shows a tuning range of about 11% and a phase noise of -137 dBc/Hz at 3 MHz offset from the carrier, for a current consumption of 2.7 mA. The VCO compares favorably with a CMOS VCO tuned by a reverse biased diode varactor

U2 - 10.1109/ISCAS.2000.857093

DO - 10.1109/ISCAS.2000.857093

M3 - Paper in conference proceeding

SN - 0-7803-5482-6

VL - 1

SP - 315

EP - 318

BT - The 2000 IEEE International Symposium on Circuits and Systems, 2000. Proceedings. ISCAS 2000.

ER -

A 1.8-GHz CMOS VCO tuned by an accumulation-mode MOS varactor

Abstract

Publication series

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