A 500 fW/bit 14 fJ/bit-access 4kb Standard-Cell Based Sub-VT Memory in 65nm CMOS

Pascal Meinerzhagen; Oskar Andersson; Babak Mohammadi; Syed Muhammad Yasser Sherazi; Andreas Burg; Joachim Rodrigues

doi:10.1109/ESSCIRC.2012.6341319

A 500 fW/bit 14 fJ/bit-access 4kb Standard-Cell Based Sub-VT Memory in 65nm CMOS

Pascal Meinerzhagen, Oskar Andersson, Babak Mohammadi, Syed Muhammad Yasser Sherazi, Andreas Burg, Joachim Rodrigues

Department of Electrical and Information Technology

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

Original language	English
Title of host publication	2012 Proceedings of the ESSCIRC (ESSCIRC)
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Pages	321-324
ISBN (Print)	978-1-4673-2212-6
DOIs	https://doi.org/10.1109/ESSCIRC.2012.6341319
Publication status	Published - 2012
Event	ESSIRC 2012 - Bordeaux, France Duration: 2012 Sept 17 → 2012 Sept 21

Conference

Conference	ESSIRC 2012
Country/Territory	France
City	Bordeaux
Period	2012/09/17 → 2012/09/21

Subject classification (UKÄ)

Electrical Engineering, Electronic Engineering, Information Engineering

Access to Document

10.1109/ESSCIRC.2012.6341319

Cite this

@inproceedings{d7e2cdbeef39421789eac6c2fbce6edd,

title = "A 500 fW/bit 14 fJ/bit-access 4kb Standard-Cell Based Sub-VT Memory in 65nm CMOS",

author = "Pascal Meinerzhagen and Oskar Andersson and Babak Mohammadi and Sherazi, {Syed Muhammad Yasser} and Andreas Burg and Joachim Rodrigues",

year = "2012",

doi = "10.1109/ESSCIRC.2012.6341319",

language = "English",

isbn = "978-1-4673-2212-6",

pages = "321--324",

booktitle = "2012 Proceedings of the ESSCIRC (ESSCIRC)",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "ESSIRC 2012 ; Conference date: 17-09-2012 Through 21-09-2012",

}

Meinerzhagen, P, Andersson, O, Mohammadi, B, Sherazi, SMY, Burg, A & Rodrigues, J 2012, A 500 fW/bit 14 fJ/bit-access 4kb Standard-Cell Based Sub-VT Memory in 65nm CMOS. in 2012 Proceedings of the ESSCIRC (ESSCIRC). IEEE - Institute of Electrical and Electronics Engineers Inc., pp. 321-324, ESSIRC 2012, Bordeaux, France, 2012/09/17. https://doi.org/10.1109/ESSCIRC.2012.6341319

A 500 fW/bit 14 fJ/bit-access 4kb Standard-Cell Based Sub-VT Memory in 65nm CMOS. / Meinerzhagen, Pascal; Andersson, Oskar; Mohammadi, Babak et al.
2012 Proceedings of the ESSCIRC (ESSCIRC). IEEE - Institute of Electrical and Electronics Engineers Inc., 2012. p. 321-324.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - A 500 fW/bit 14 fJ/bit-access 4kb Standard-Cell Based Sub-VT Memory in 65nm CMOS

AU - Meinerzhagen, Pascal

AU - Andersson, Oskar

AU - Mohammadi, Babak

AU - Sherazi, Syed Muhammad Yasser

AU - Burg, Andreas

AU - Rodrigues, Joachim

PY - 2012

Y1 - 2012

U2 - 10.1109/ESSCIRC.2012.6341319

DO - 10.1109/ESSCIRC.2012.6341319

M3 - Paper in conference proceeding

SN - 978-1-4673-2212-6

SP - 321

EP - 324

BT - 2012 Proceedings of the ESSCIRC (ESSCIRC)

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - ESSIRC 2012

Y2 - 17 September 2012 through 21 September 2012

ER -