A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure

Lassana Ouattara; Anders Mikkelsen; Edvin Lundgren; L. Hoglund; C. Asplund; J. Y. Andersson

doi:10.1063/1.2245195

A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure

Lassana Ouattara, Anders Mikkelsen, Edvin Lundgren, L. Hoglund, C. Asplund, J. Y. Andersson

Synchrotron Radiation Research

Research output: Contribution to journal › Article › peer-review

Abstract

We report on cross-sectional scanning tunneling microscopy studies of a quantum dot infrared photodetector structure consisting of multiple InGaAs quantum wells containing InAs quantum dots and separated by GaAs. We have investigated the composition and size distribution of the InAs quantum dots in this structure. Using cross-sectional scanning tunneling microscopy images displaying atomic resolution, we reveal that the InAs quantum dots are strongly intermixed with the InGaAs quantum well layer. We estimate the size distribution of the dots and find this to be nonuniform. Further, defects related to dopants introduced in the structure are identified and their concentration is estimated. (c) 2006 American Institute of Physics.

Original language	English
Journal	Applied Physics Reviews
Volume	100
Issue number	4
DOIs	https://doi.org/10.1063/1.2245195
Publication status	Published - 2006

Subject classification (UKÄ)

Atom and Molecular Physics and Optics

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10.1063/1.2245195

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title = "A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure",

abstract = "We report on cross-sectional scanning tunneling microscopy studies of a quantum dot infrared photodetector structure consisting of multiple InGaAs quantum wells containing InAs quantum dots and separated by GaAs. We have investigated the composition and size distribution of the InAs quantum dots in this structure. Using cross-sectional scanning tunneling microscopy images displaying atomic resolution, we reveal that the InAs quantum dots are strongly intermixed with the InGaAs quantum well layer. We estimate the size distribution of the dots and find this to be nonuniform. Further, defects related to dopants introduced in the structure are identified and their concentration is estimated. (c) 2006 American Institute of Physics.",

author = "Lassana Ouattara and Anders Mikkelsen and Edvin Lundgren and L. Hoglund and C. Asplund and Andersson, {J. Y.}",

year = "2006",

doi = "10.1063/1.2245195",

language = "English",

volume = "100",

journal = "Applied Physics Reviews",

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T1 - A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure

AU - Ouattara, Lassana

AU - Mikkelsen, Anders

AU - Lundgren, Edvin

AU - Hoglund, L.

AU - Asplund, C.

AU - Andersson, J. Y.

PY - 2006

Y1 - 2006

N2 - We report on cross-sectional scanning tunneling microscopy studies of a quantum dot infrared photodetector structure consisting of multiple InGaAs quantum wells containing InAs quantum dots and separated by GaAs. We have investigated the composition and size distribution of the InAs quantum dots in this structure. Using cross-sectional scanning tunneling microscopy images displaying atomic resolution, we reveal that the InAs quantum dots are strongly intermixed with the InGaAs quantum well layer. We estimate the size distribution of the dots and find this to be nonuniform. Further, defects related to dopants introduced in the structure are identified and their concentration is estimated. (c) 2006 American Institute of Physics.

AB - We report on cross-sectional scanning tunneling microscopy studies of a quantum dot infrared photodetector structure consisting of multiple InGaAs quantum wells containing InAs quantum dots and separated by GaAs. We have investigated the composition and size distribution of the InAs quantum dots in this structure. Using cross-sectional scanning tunneling microscopy images displaying atomic resolution, we reveal that the InAs quantum dots are strongly intermixed with the InGaAs quantum well layer. We estimate the size distribution of the dots and find this to be nonuniform. Further, defects related to dopants introduced in the structure are identified and their concentration is estimated. (c) 2006 American Institute of Physics.

U2 - 10.1063/1.2245195

DO - 10.1063/1.2245195

M3 - Article

SN - 1931-9401

VL - 100

JO - Applied Physics Reviews

JF - Applied Physics Reviews

IS - 4

ER -

A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure

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