A fully integrated 2.45 GHz 0.25 mu m CMOS power amplifier

Pieternella Cijvat; Henrik Sjöland

doi:10.1109/ICECS.2003.1301701

A fully integrated 2.45 GHz 0.25 mu m CMOS power amplifier

Pieternella Cijvat, Henrik Sjöland

Department of Electrical and Information Technology

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

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Abstract

A fully integrated differential class-AB power amplifier has been designed in a 0.25 um CMOS technology. It is intended for medium output power ranges such as Bluetooth class 1, and has an operating frequency of 2.45 GHz. By using two parallel output stages that can be switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output power is 22.7 dBm, while the maximum power-added efficiency is 22%.

Original language	English
Title of host publication	Proceedings of the 10th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2003.
Publisher	IEEE - Institute of Electrical and Electronics Engineers Inc.
Pages	1094-1097
Number of pages	4
ISBN (Print)	0-7803-8163-7
DOIs	https://doi.org/10.1109/ICECS.2003.1301701
Publication status	Published - 2003
Event	10th IEEE International Conference on Electronics, Circuits and Systems - Sharjah, United Arab Emirates Duration: 2003 Dec 14 → 2003 Dec 17

Conference

Conference	10th IEEE International Conference on Electronics, Circuits and Systems
Country/Territory	United Arab Emirates
City	Sharjah
Period	2003/12/14 → 2003/12/17

Subject classification (UKÄ)

Electrical Engineering, Electronic Engineering, Information Engineering

Free keywords

wireless communication
frequency doubling
transmitter
Power amplifier

Access to Document

10.1109/ICECS.2003.1301701

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Cite this

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title = "A fully integrated 2.45 GHz 0.25 mu m CMOS power amplifier",

abstract = "A fully integrated differential class-AB power amplifier has been designed in a 0.25 um CMOS technology. It is intended for medium output power ranges such as Bluetooth class 1, and has an operating frequency of 2.45 GHz. By using two parallel output stages that can be switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output power is 22.7 dBm, while the maximum power-added efficiency is 22%.",

keywords = "wireless communication, frequency doubling, transmitter, Power amplifier",

author = "Pieternella Cijvat and Henrik Sj{\"o}land",

year = "2003",

doi = "10.1109/ICECS.2003.1301701",

language = "English",

isbn = "0-7803-8163-7",

pages = "1094--1097",

booktitle = "Proceedings of the 10th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2003.",

publisher = "IEEE - Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "10th IEEE International Conference on Electronics, Circuits and Systems ; Conference date: 14-12-2003 Through 17-12-2003",

}

Cijvat, P & Sjöland, H 2003, A fully integrated 2.45 GHz 0.25 mu m CMOS power amplifier. in Proceedings of the 10th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2003.. IEEE - Institute of Electrical and Electronics Engineers Inc., pp. 1094-1097, 10th IEEE International Conference on Electronics, Circuits and Systems, Sharjah, United Arab Emirates, 2003/12/14. https://doi.org/10.1109/ICECS.2003.1301701

A fully integrated 2.45 GHz 0.25 mu m CMOS power amplifier. / Cijvat, Pieternella; Sjöland, Henrik.
Proceedings of the 10th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2003.. IEEE - Institute of Electrical and Electronics Engineers Inc., 2003. p. 1094-1097.

Research output: Chapter in Book/Report/Conference proceeding › Paper in conference proceeding › peer-review

TY - GEN

T1 - A fully integrated 2.45 GHz 0.25 mu m CMOS power amplifier

AU - Cijvat, Pieternella

AU - Sjöland, Henrik

PY - 2003

Y1 - 2003

N2 - A fully integrated differential class-AB power amplifier has been designed in a 0.25 um CMOS technology. It is intended for medium output power ranges such as Bluetooth class 1, and has an operating frequency of 2.45 GHz. By using two parallel output stages that can be switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output power is 22.7 dBm, while the maximum power-added efficiency is 22%.

AB - A fully integrated differential class-AB power amplifier has been designed in a 0.25 um CMOS technology. It is intended for medium output power ranges such as Bluetooth class 1, and has an operating frequency of 2.45 GHz. By using two parallel output stages that can be switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output power is 22.7 dBm, while the maximum power-added efficiency is 22%.

KW - wireless communication

KW - frequency doubling

KW - transmitter

KW - Power amplifier

U2 - 10.1109/ICECS.2003.1301701

DO - 10.1109/ICECS.2003.1301701

M3 - Paper in conference proceeding

SN - 0-7803-8163-7

SP - 1094

EP - 1097

BT - Proceedings of the 10th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2003.

PB - IEEE - Institute of Electrical and Electronics Engineers Inc.

T2 - 10th IEEE International Conference on Electronics, Circuits and Systems

Y2 - 14 December 2003 through 17 December 2003

ER -

A fully integrated 2.45 GHz 0.25 mu m CMOS power amplifier

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