A low band cellular terminal antenna impedance tuner in 130nm CMOS-SOI technology

Jonas Lindstrand, Ivaylo Vasilev, Henrik Sjöland

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingResearchpeer-review

3 Citations (SciVal)


This paper presents a low band antenna impedance tuner in 130nm CMOS-SOI technology. It consists of three digitally controlled switched capacitor banks and two off-chip inductors and is intended for use in terminals supporting modern cellular standards like WCDMA and LTE. By using a negative gate bias in the off state, linearity can be improved and maintained. Measurements show an OIP3 exceeding +55dBm for all measured impedance states, which cover a VSWR of up to 5.4. The measured minimum loss is 1dB or lower in the frequency range from 700–900MHz with spurious emissions below −30dBm at +33dBm input power. The switched capacitors are implemented with eight stacked transistors to yield a voltage handling of at least 20V, and in order to handle the large voltages custom designed capacitors are used.
Original languageEnglish
Title of host publication[Host publication title missing]
PublisherIEEE - Institute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Print)978-1-4799-5694-4
Publication statusPublished - 2014
EventEuropean Solid State Circuits Conference (ESSCIRC), 2014 - Venezia Lido, ITALY, Venice, Italy
Duration: 2014 Sep 222014 Sep 26
Conference number: 40

Publication series

ISSN (Print)1930-8833


ConferenceEuropean Solid State Circuits Conference (ESSCIRC), 2014

Subject classification (UKÄ)

  • Electrical Engineering, Electronic Engineering, Information Engineering


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