A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire.

Henrik Nilsson; Tim Duty; Simon Abay; Chris Wilson; Jakob Wagner; Claes Thelander; Per Delsing; Lars Samuelson

doi:10.1021/nl0731062

A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire.

Henrik Nilsson, Tim Duty, Simon Abay, Chris Wilson, Jakob Wagner, Claes Thelander, Per Delsing, Lars Samuelson

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from -0.5 to at least 1.8 V. The charge sensitivity was measured to 32 microe rms Hz (-1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 microe rms Hz (-1/2). At low frequencies this device showed a typical 1/ f noise behavior, with a level extrapolated to 300 microe rms Hz (-1/2) at 10 Hz.

Original language	English
Pages (from-to)	872-875
Journal	Nano Letters
Volume	8
Issue number	3
DOIs	https://doi.org/10.1021/nl0731062
Publication status	Published - 2008

Bibliographical note

The information about affiliations in this record was updated in December 2015.
The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)

Subject classification (UKÄ)

Nano-technology

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10.1021/nl0731062

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title = "A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire.",

abstract = "We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from -0.5 to at least 1.8 V. The charge sensitivity was measured to 32 microe rms Hz (-1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 microe rms Hz (-1/2). At low frequencies this device showed a typical 1/ f noise behavior, with a level extrapolated to 300 microe rms Hz (-1/2) at 10 Hz.",

author = "Henrik Nilsson and Tim Duty and Simon Abay and Chris Wilson and Jakob Wagner and Claes Thelander and Per Delsing and Lars Samuelson",

note = "The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)",

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doi = "10.1021/nl0731062",

language = "English",

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pages = "872--875",

journal = "Nano Letters",

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publisher = "The American Chemical Society (ACS)",

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T1 - A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire.

AU - Nilsson, Henrik

AU - Duty, Tim

AU - Abay, Simon

AU - Wilson, Chris

AU - Wagner, Jakob

AU - Thelander, Claes

AU - Delsing, Per

AU - Samuelson, Lars

N1 - The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)

PY - 2008

Y1 - 2008

N2 - We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from -0.5 to at least 1.8 V. The charge sensitivity was measured to 32 microe rms Hz (-1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 microe rms Hz (-1/2). At low frequencies this device showed a typical 1/ f noise behavior, with a level extrapolated to 300 microe rms Hz (-1/2) at 10 Hz.

AB - We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from -0.5 to at least 1.8 V. The charge sensitivity was measured to 32 microe rms Hz (-1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 microe rms Hz (-1/2). At low frequencies this device showed a typical 1/ f noise behavior, with a level extrapolated to 300 microe rms Hz (-1/2) at 10 Hz.

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U2 - 10.1021/nl0731062

DO - 10.1021/nl0731062

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JO - Nano Letters

JF - Nano Letters

IS - 3

ER -

A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire.

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