A resonant galvanically separated power MOSFET/IGBT gate driver

Tomas Bergh, Per Karlsson, Mats Alaküla

Research output: Chapter in Book/Report/Conference proceedingPaper in conference proceedingpeer-review

Abstract

This paper provides a complete circuit for a low-loss non-conventional power MOSFET or IGBT driver. The driver, which provides galvanically separated input and output signals, is fed from a unipolar DC voltage but provides a bipolar gate-source voltage. The driver applies two, already known, techniques and together they form a resonant galvanically separated power MOSFET/IGBT gate driver. The first technique provides the galvanic separation, voltage level increase (or decrease) for the energy supply and signal transfer to the second technique. The second technique is the driver circuit, which is a resonant circuit that provides good driver properties. Together they form an inexpensive and non-complicated circuit, compared to conventional MOSFET or IGBT drivers. The use of expensive DC-DC converters is avoided and still bipolar gate voltages are provided
Original languageEnglish
Title of host publication2004 IEEE 35th Annual Power Electronics Specialists Conference
PublisherIEEE - Institute of Electrical and Electronics Engineers Inc.
Pages3243-3247
ISBN (Print)0-7803-8399-0
DOIs
Publication statusPublished - 2004
Event2004 IEEE 35th Annual Power Electronics Specialists Conference - Aachen, Germany
Duration: 2004 Jun 202004 Jun 25

Conference

Conference2004 IEEE 35th Annual Power Electronics Specialists Conference
Country/TerritoryGermany
CityAachen
Period2004/06/202004/06/25

Subject classification (UKÄ)

  • Other Electrical Engineering, Electronic Engineering, Information Engineering

Free keywords

  • galvanic separation
  • bipolar gate-source voltage
  • unipolar DC voltage
  • IGBT driver
  • resonant galvanically driver
  • power MOSFET gate driver
  • resonant circuit
  • signal transfer
  • DC-DC converter

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