Abstract
Quantum confined devices of 3D topological insulators are proposed to be promising and of great importance for studies of confined topological states and for applications in low-energy-dissipative spintronics and quantum information processing. The absence of energy gap on the topological insulator surface limits the experimental realization of a quantum confined system in 3D topological insulators. Here, the successful realization of single-electron transistor devices in Bi2Te3 nanoplates using state-of-the-art nanofabrication techniques is reported. Each device consists of a confined central island, two narrow constrictions that connect the central island to the source and drain, and surrounding gates. Low-temperature transport measurements demonstrate that the two narrow constrictions function as tunneling junctions and the device shows well-defined Coulomb current oscillations and Coulomb-diamond-shaped charge-stability diagrams. This work provides a controllable and reproducible way to form quantum confined systems in 3D topological insulators, which should greatly stimulate research toward confined topological states, low-energy-dissipative devices, and quantum information processing.
Original language | English |
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Article number | 1903686 |
Journal | Advanced Materials |
Volume | 31 |
Issue number | 42 |
Early online date | 2019 |
DOIs | |
Publication status | Published - 2019 |
Subject classification (UKÄ)
- Condensed Matter Physics
Free keywords
- bismuth telluride
- Coulomb blockade
- single-electron transistors
- topological insulators