A Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate

Yumei Jing, Shaoyun Huang, Jinxiong Wu, Mengmeng Meng, Xiaobo Li, Yu Zhou, Hailin Peng, Hongqi Xu

Research output: Contribution to journalArticlepeer-review

5 Citations (SciVal)

Abstract

Quantum confined devices of 3D topological insulators are proposed to be promising and of great importance for studies of confined topological states and for applications in low-energy-dissipative spintronics and quantum information processing. The absence of energy gap on the topological insulator surface limits the experimental realization of a quantum confined system in 3D topological insulators. Here, the successful realization of single-electron transistor devices in Bi2Te3 nanoplates using state-of-the-art nanofabrication techniques is reported. Each device consists of a confined central island, two narrow constrictions that connect the central island to the source and drain, and surrounding gates. Low-temperature transport measurements demonstrate that the two narrow constrictions function as tunneling junctions and the device shows well-defined Coulomb current oscillations and Coulomb-diamond-shaped charge-stability diagrams. This work provides a controllable and reproducible way to form quantum confined systems in 3D topological insulators, which should greatly stimulate research toward confined topological states, low-energy-dissipative devices, and quantum information processing.

Original languageEnglish
Article number1903686
JournalAdvanced Materials
Volume31
Issue number42
Early online date2019
DOIs
Publication statusPublished - 2019

Subject classification (UKÄ)

  • Condensed Matter Physics

Keywords

  • bismuth telluride
  • Coulomb blockade
  • single-electron transistors
  • topological insulators

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