A structure of CdS/CuxS quantum dots sensitized solar cells

Ting Shen; Lu Bian; Bo Li; Kaibo Zheng; Tönu Pullerits; Jianjun Tian

doi:10.1063/1.4952435

A structure of CdS/Cu_xS quantum dots sensitized solar cells

Ting Shen, Lu Bian, Bo Li, Kaibo Zheng, Tönu Pullerits, Jianjun Tian

University of Science and Technology Beijing

Research output: Contribution to journal › Article › peer-review

Abstract

This work introduces a type of CdS/Cu_xS quantum dots (QDs) as sensitizers in quantum dot sensitized solar cells by in-situ cationic exchange reaction method where CdS photoanode is directly immersed in CuCl₂ methanol solution to replace Cd²⁺ by Cu²⁺. The p-type Cu_xS layer on the surface of the CdS QDs can be considered as hole transport material, which not only enhances the light harvesting of photoanode but also boosts the charge separation after photo-excitation. Therefore, both the electron collection efficiency and power conversion efficiency of the solar cell are improved from 80% to 92% and from 1.21% to 2.78%, respectively.

Original language	English
Article number	213901
Journal	Applied Physics Letters
Volume	108
Issue number	21
DOIs	https://doi.org/10.1063/1.4952435
Publication status	Published - 2016 May 23

Subject classification (UKÄ)

Physical Chemistry (including Surface- and Colloid Chemistry)
Condensed Matter Physics (including Material Physics, Nano Physics)

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10.1063/1.4952435

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@article{c50373c23a6d410b82a5a19106bfd85a,

title = "A structure of CdS/CuxS quantum dots sensitized solar cells",

abstract = "This work introduces a type of CdS/CuxS quantum dots (QDs) as sensitizers in quantum dot sensitized solar cells by in-situ cationic exchange reaction method where CdS photoanode is directly immersed in CuCl2 methanol solution to replace Cd2+ by Cu2+. The p-type CuxS layer on the surface of the CdS QDs can be considered as hole transport material, which not only enhances the light harvesting of photoanode but also boosts the charge separation after photo-excitation. Therefore, both the electron collection efficiency and power conversion efficiency of the solar cell are improved from 80\% to 92\% and from 1.21\% to 2.78\%, respectively.",

author = "Ting Shen and Lu Bian and Bo Li and Kaibo Zheng and T{\"o}nu Pullerits and Jianjun Tian",

year = "2016",

month = may,

day = "23",

doi = "10.1063/1.4952435",

language = "English",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics (AIP)",

number = "21",

}

TY - JOUR

T1 - A structure of CdS/CuxS quantum dots sensitized solar cells

AU - Shen, Ting

AU - Bian, Lu

AU - Li, Bo

AU - Zheng, Kaibo

AU - Pullerits, Tönu

AU - Tian, Jianjun

PY - 2016/5/23

Y1 - 2016/5/23

N2 - This work introduces a type of CdS/CuxS quantum dots (QDs) as sensitizers in quantum dot sensitized solar cells by in-situ cationic exchange reaction method where CdS photoanode is directly immersed in CuCl2 methanol solution to replace Cd2+ by Cu2+. The p-type CuxS layer on the surface of the CdS QDs can be considered as hole transport material, which not only enhances the light harvesting of photoanode but also boosts the charge separation after photo-excitation. Therefore, both the electron collection efficiency and power conversion efficiency of the solar cell are improved from 80% to 92% and from 1.21% to 2.78%, respectively.

AB - This work introduces a type of CdS/CuxS quantum dots (QDs) as sensitizers in quantum dot sensitized solar cells by in-situ cationic exchange reaction method where CdS photoanode is directly immersed in CuCl2 methanol solution to replace Cd2+ by Cu2+. The p-type CuxS layer on the surface of the CdS QDs can be considered as hole transport material, which not only enhances the light harvesting of photoanode but also boosts the charge separation after photo-excitation. Therefore, both the electron collection efficiency and power conversion efficiency of the solar cell are improved from 80% to 92% and from 1.21% to 2.78%, respectively.

UR - https://www.scopus.com/pages/publications/84971368286

U2 - 10.1063/1.4952435

DO - 10.1063/1.4952435

M3 - Article

C2 - 27375297

AN - SCOPUS:84971368286

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 213901

ER -

A structure of CdS/Cu_xS quantum dots sensitized solar cells

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Subject classification (UKÄ)

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