Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors

Erik Lind, Yann-Michel Niquet, Hector Mera, Lars-Erik Wernersson

Research output: Contribution to journalArticlepeer-review

Abstract

We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The capacitance for InAs and In0.53Ga0.47As capacitors with a HfO2 oxide layer has been calculated using atomistic tight-binding, effective mass, and semiclassical nonparabolic models. The simulations show that band structure effects have a strong influence on the accumulation capacitance, and are essential for the description of narrow band gap capacitors. The calculated tight binding data compare well with measurements on n-type InAs HfO2 capacitors on (100) and (111) B substrates, highlighting the nonparabolicity as the main origin for the large accumulation capacitance. (C) 2010 American Institute of Physics. [doi:10.1063/1.3449559]
Original languageEnglish
Article number233507
JournalApplied Physics Letters
Volume96
Issue number23
DOIs
Publication statusPublished - 2010

Subject classification (UKÄ)

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

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