Abstract
We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The capacitance for InAs and In0.53Ga0.47As capacitors with a HfO2 oxide layer has been calculated using atomistic tight-binding, effective mass, and semiclassical nonparabolic models. The simulations show that band structure effects have a strong influence on the accumulation capacitance, and are essential for the description of narrow band gap capacitors. The calculated tight binding data compare well with measurements on n-type InAs HfO2 capacitors on (100) and (111) B substrates, highlighting the nonparabolicity as the main origin for the large accumulation capacitance. (C) 2010 American Institute of Physics. [doi:10.1063/1.3449559]
Original language | English |
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Article number | 233507 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 23 |
DOIs | |
Publication status | Published - 2010 |
Subject classification (UKÄ)
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering