Caesiated InAs(111)B (1 x 1) and InAs(111)A (2 x 2) surfaces have been studied by photoelectron spectroscopy. On the InAs(111)B a new (root 3 x root 3)R30 degrees reconstruction was observed. During Cs evaporation remarkably small changes are observed in the lone pair states, and no sign of an accumulation layer at the surface can be observed. Instead, the additional charge provided by Cs is rapidly transported towards the bulk. On the InAs(111)A cesium behaves as a typical electropositive alkali metal donator that enhances the already existing accumulation layer. (c) 2005 Elsevier B.V. All rights reserved.
|Conference||Eight International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures and the Thirteenth International Congress on Thin Films - ACSIN8/ICTF13|
|Period||2005/06/20 → 2005/06/23|
- Physical Sciences
- Natural Sciences
- indium arsenide