Angle-resolved photoemission study and pseudopotential calculations of GeTe and Ge1-xMnxTe band structure

B. J. Kowalski; M. A. Pietrzyk; W. Knoff; A. Łusakowski; J. Sadowski; J. Adell; T. Story

doi:10.1016/j.phpro.2010.01.191

Angle-resolved photoemission study and pseudopotential calculations of GeTe and Ge1-xMnxTe band structure

B. J. Kowalski, M. A. Pietrzyk, W. Knoff, A. Łusakowski, J. Sadowski, J. Adell, T. Story

MAX IV Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Book chapter › Research › peer-review

Abstract

The valence band structure along the Γ-T and T-W-L directions in the Brillouin zone of GeTe is studied by means of angle-resolved photoemission and compared with the results of ab initio pseudopotential calculations. For Ge_1-xMn_xTe surface alloy, changes in the valence band induced by presence of Mn atoms are revealed.

Original language	English
Title of host publication	Physics Procedia
Pages	1357-1362
Number of pages	6
Volume	3
Edition	2
DOIs	https://doi.org/10.1016/j.phpro.2010.01.191
Publication status	Published - 2010 Jan 31
Event	14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 - Senda, Japan Duration: 2009 Jul 13 → 2009 Jul 17

Conference

Conference	14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14
Country/Territory	Japan
City	Senda
Period	2009/07/13 → 2009/07/17

Free keywords

Band structure
Germanium telluride
Photoemission

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10.1016/j.phpro.2010.01.191

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title = "Angle-resolved photoemission study and pseudopotential calculations of GeTe and Ge1-xMnxTe band structure",

abstract = "The valence band structure along the Γ-T and T-W-L directions in the Brillouin zone of GeTe is studied by means of angle-resolved photoemission and compared with the results of ab initio pseudopotential calculations. For Ge1-xMnxTe surface alloy, changes in the valence band induced by presence of Mn atoms are revealed.",

keywords = "Band structure, Germanium telluride, Photoemission",

author = "Kowalski, {B. J.} and Pietrzyk, {M. A.} and W. Knoff and A. {\L}usakowski and J. Sadowski and J. Adell and T. Story",

year = "2010",

month = jan,

day = "31",

doi = "10.1016/j.phpro.2010.01.191",

language = "English",

volume = "3",

pages = "1357--1362",

booktitle = "Physics Procedia",

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note = "14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 ; Conference date: 13-07-2009 Through 17-07-2009",

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Kowalski, BJ, Pietrzyk, MA, Knoff, W, Łusakowski, A, Sadowski, J, Adell, J & Story, T 2010, Angle-resolved photoemission study and pseudopotential calculations of GeTe and Ge1-xMnxTe band structure. in Physics Procedia. 2 edn, vol. 3, pp. 1357-1362, 14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14, Senda, Japan, 2009/07/13. https://doi.org/10.1016/j.phpro.2010.01.191

TY - CHAP

T1 - Angle-resolved photoemission study and pseudopotential calculations of GeTe and Ge1-xMnxTe band structure

AU - Kowalski, B. J.

AU - Pietrzyk, M. A.

AU - Knoff, W.

AU - Łusakowski, A.

AU - Sadowski, J.

AU - Adell, J.

AU - Story, T.

PY - 2010/1/31

Y1 - 2010/1/31

N2 - The valence band structure along the Γ-T and T-W-L directions in the Brillouin zone of GeTe is studied by means of angle-resolved photoemission and compared with the results of ab initio pseudopotential calculations. For Ge1-xMnxTe surface alloy, changes in the valence band induced by presence of Mn atoms are revealed.

AB - The valence band structure along the Γ-T and T-W-L directions in the Brillouin zone of GeTe is studied by means of angle-resolved photoemission and compared with the results of ab initio pseudopotential calculations. For Ge1-xMnxTe surface alloy, changes in the valence band induced by presence of Mn atoms are revealed.

KW - Band structure

KW - Germanium telluride

KW - Photoemission

UR - http://www.scopus.com/inward/record.url?scp=76249106882&partnerID=8YFLogxK

U2 - 10.1016/j.phpro.2010.01.191

DO - 10.1016/j.phpro.2010.01.191

M3 - Book chapter

AN - SCOPUS:76249106882

VL - 3

SP - 1357

EP - 1362

BT - Physics Procedia

T2 - 14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14

Y2 - 13 July 2009 through 17 July 2009

ER -

Angle-resolved photoemission study and pseudopotential calculations of GeTe and Ge1-xMnxTe band structure

Abstract

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